The course will provide you with the basic concepts of the engineering principles behind semiconductor processing, wafer fabrication and physical principles underlying the operation of basic semiconductor devices. The contents of the course include the fundamentals of p-n diodes, bipolar devices, MOS devices, deposition techniques, diffusion and thermal oxidation, ion implantation, lithography and etching.
Contents: Fundamentals of Bipolar Devices. MOS Devices. Crystal growth and wafer preparation. Deposition Techniques. Diffusion and thermal oxidation. Ion implantation. Lithography. Etching.
| AUs | 3.0 AUs |
| Grade Type | |
| Prerequisite | EE2103, EE2003 |
| Exam | 25 November 2026, 9.00 am - 11.00 am |
The Exam information shown may be subject to changes. Students are to check the finalised exam timetable with exam seat information, which will be available at the 'Examination Seating Arrangement' webpage, 2 weeks before start of examination.
Prerequisite Graph
Semiconductor Devices & Processing
Available Indexes
| Mon | Tue | Wed | Thu | Fri | |
|---|---|---|---|---|---|
| 1030 | 32337 TUT (EE01) 1030-1120 Tue TR+94 | 32338 TUT (EE02) 1030-1120 Fri TR+62 | |||
| 1100 | |||||
| 1130 | |||||
| 1200 | |||||
| 1230 | |||||
| 1300 | |||||
| 1330 | 32344 TUT (EE03) 1330-1420 Fri TR+64 | ||||
| 1400 | |||||
| 1430 | |||||
| 1500 | |||||
| 1530 | |||||
| 1600 | |||||
| 1630 | COMMON LEC (EELE) 1630-1820 Thu LT23 | ||||
| 1700 | |||||
| 1730 | |||||
| 1800 |
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