Semiconductor Devices Processing
AY2026/2027 Semester 1
The course will provide you with the basic concepts of the engineering principles behind semiconductor processing, wafer fabrication and physical principles underlying the operation of basic semiconductor devices. The contents of the course include the fundamentals of p-n diodes, bipolar devices, MOS devices, deposition techniques, diffusion and thermal oxidation, ion implantation, lithography and etching. Contents: Fundamentals of Bipolar Devices. MOS Devices. Crystal growth and wafer preparation. Deposition Techniques. Diffusion and thermal oxidation. Ion implantation. Lithography. Etching.
| AUs | 3.0 AUs |
| Categories | CoreBDE |
| Not Available As BDE/UE To Programme | MAT |
| Exam | 25 November 2026, 9.00 am - 11.00 am |
Available indexes
| Mon | Tue | Wed | Thu | Fri | |
|---|---|---|---|---|---|
| 1030 | 32337 TUT (EE01) 1030-1120 Tue TR+94 | 32338 TUT (EE02) 1030-1120 Fri TR+62 | |||
| 1100 | |||||
| 1130 | |||||
| 1200 | |||||
| 1230 | |||||
| 1300 | |||||
| 1330 | 32344 TUT (EE03) 1330-1420 Fri TR+64 | ||||
| 1400 | |||||
| 1430 | |||||
| 1500 | |||||
| 1530 | |||||
| 1600 | |||||
| 1630 | COMMON LEC (EELE) 1630-1820 Thu LT23 | ||||
| 1700 | |||||
| 1730 | |||||
| 1800 |