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Advanced MOS structures and process technology. Advanced bipolar transistors and process technology. MOS scaling rules and small geometry effects. CMOS latchup and isolation.
Details: 1) MOS Structure. MOSFETS. NMOS Process. CMOS Process. P-Well CMOS. N-Well CMOS. Twin-Well CMOS. 2) Basic Bipolar Transistor Structures. Advanced Bipolar Transistor Structures. Introduction of BiCMOS. 3) Geometry Effect on Circuit Speed. Experimental Short-Channel Characteristics. Short-Channel Effect on Drain Current. Geometry Effects on Threshold Voltage. Hot Carrier Effect and Drain Engineering. Scaling Laws of MOS Devices. Velocity Saturation. 4) CMOS Latchup: Basic Switching Operation, Causes of Latchup, Latchup Characterization, and Latchup Prevention. 5) MOS Isolation. CMOS Isolation. New Isolation Techniques for CMOS.
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EE3013Semiconductor Devices & ProcessingVlsi Technology
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