Introduction of semiconductor process, crystal structures and defects; Crystal growth: czochralski method, doping methods and distribution. Gettering, wafer preparation; diffusion equations, diffusion profiles, predeposition, drive-in diffusion, annealing; Oxidation: properties of silicon dioxide, thermal oxidation, kinetics of oxide growth, effects of impurities, oxidation process; Deposition: dielectric film deposition, processes for deposition of silicon dioxide/nitride and polysilicon films; CVD depositions; Sputtering: properties of glow discharges, creation and structure of glow discharges, sputter deposited film growth; Sputtering techniques: RF sputtering, DC magnetrons, bias sputtering, reactive sputtering and ion metal plasma sputtering; Lithography: optical lithography, positive and negative photoresists, lift-off technique, mask making; electron beam lithography, ion beam lithography; Etching: wet chemical etching, etching mechanism, dry etching, dry etching mechanism, plasma etching, reactive ion etching.
| AUs | 4.0 AUs |
| Grade Type | |
| Prerequisite | |
| Not Available To Programme | MAT(2011-onwards)(Non Direct Entry), MAT(2012-onwards)(Direct Entry), MTEC(2011-onwards) |
| Not Available To All Programme With | |
| Not Available As BDE/UE To Programme | |
| Not Available As Core To Programme | |
| Not Available As PE To Programme | |
| Mutually Exclusive With | MS3012, MS302 |
| Not Offered As BDE | |
| Not Offered As Unrestricted Elective | |
| Exam |
Available Indexes
| Mon | Tue | Wed | Thu | Fri | |
|---|---|---|---|---|---|
| 930 | |||||
| 1000 | |||||
| 1030 | |||||
| 1100 | |||||
| 1130 | |||||
| 1200 | |||||
| 1230 | |||||
| 1300 | |||||
| 1330 | |||||
| 1400 | |||||
| 1430 | |||||
| 1500 | |||||
| 1530 | |||||
| 1600 | |||||
| 1630 | |||||
| 1700 | |||||
| 1730 | |||||
| 1800 |
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Polymers And Composites
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Materials Structure And Defects
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