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Not offered in the current semester · Last offered AY2014/2015 Semester 1
ModsMS3002

Advanced Materials Processing

Last offered — AY2014/2015 Semester 1

Introduction of semiconductor process, crystal structures and defects; Crystal growth: czochralski method, doping methods and distribution. Gettering, wafer preparation; diffusion equations, diffusion profiles, predeposition, drive-in diffusion, annealing; Oxidation: properties of silicon dioxide, thermal oxidation, kinetics of oxide growth, effects of impurities, oxidation process; Deposition: dielectric film deposition, processes for deposition of silicon dioxide/nitride and polysilicon films; CVD depositions; Sputtering: properties of glow discharges, creation and structure of glow discharges, sputter deposited film growth; Sputtering techniques: RF sputtering, DC magnetrons, bias sputtering, reactive sputtering and ion metal plasma sputtering; Lithography: optical lithography, positive and negative photoresists, lift-off technique, mask making; electron beam lithography, ion beam lithography; Etching: wet chemical etching, etching mechanism, dry etching, dry etching mechanism, plasma etching, reactive ion etching.

AUs4.0 AUs
Grade Type
Prerequisite
Not Available To ProgrammeMAT(2011-onwards)(Non Direct Entry), MAT(2012-onwards)(Direct Entry), MTEC(2011-onwards)
Not Available To All Programme With
Not Available As BDE/UE To Programme
Not Available As Core To Programme
Not Available As PE To Programme
Mutually Exclusive WithMS3012, MS302
Not Offered As BDE
Not Offered As Unrestricted Elective
Exam

Total hours per week: 3 hrs